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| KSC5502 -- NPN Planar Silicon Transistor April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application * Small Variance in Storage Time * Wide Safe Operating Area * Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * Symbol BVCBO BVCEO BVEBO IC ICP IB IBP PC TJ TSTG EAS TC=25C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)** Base Current (DC) Collector Current (Pulse)** Collector Dissipation(TC=25C) Junction Temperature Storage Junction Temperature Range Avalanche Energy(Tj=25C) Value 1200 600 12 2 4 1 2 50 150 - 65 ~ 150 2.5 Units V V V A A A A W C C mJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle 10% Thermal Characteristics T =25C unless otherwise noted a Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 2.5 85 Units C/W C/W Ordering Information Part Number KSC5502TU Marking J5502 Package TO-220 Packing Method TUBE (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 1 www.fairchildsemi.com KSC5502 -- High Voltage Power Switch Mode Application Electrical Characteristics * TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCES=1200V, VBE=0 TC=25C TC=125C Min. 1200 600 12 Typ. 1350 750 13.2 Max. Units V V V 100 500 100 500 10 15 8 4 3 12 6 28 27 8.7 6.6 20 16 0.09 0.13 0.08 0.12 0.19 0.35 0.77 0.65 0.83 0.70 410 20 0.8 1.1 0.6 1.0 1.5 3.0 1.0 0.9 1.2 1.0 500 100 30 40 A ICEO Collector Cut-off Current VCE=600V, IB=0 TC=25C TC=125C A IEBO hFE Emitter Cut-off Current DC Current Gain VEB=12V, IC=0 VCE=1V, IC=0.2A TC=25C TC=25C TC=125C A VCE=1V, IC=1A TC=25C TC=125C VCE=2.5V, IC=0.5A TC=25C TC=125C VCE(sat) Collector-Emitter Saturation Voltage IC=0.2A, IB=0.02A TC=25C TC=125C V V V V V V V V V V pF pF IC=0.4A, IB=0.08A TC=25C TC=125C IC=1A, IB=0.2A TC=25C TC=125C VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.08A TC=25C TC=125C IC=1A, IB=0.2A TC=25C TC=125C Cib Cob Input Capacitance Output Capacitance VEB=8V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz * Pulse Test : Pulse Width = 5ms, Duty Cycle 10% (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 2 www.fairchildsemi.com KSC5502 -- High Voltage Power Switch Mode Application Electrical Characteristics TC=25C unless otherwise noted Symbol VCE(DSAT) Parameter Dynamic Saturation Voltage Test Condition IC=0.4A, IB1=80mA VCC=300V IC=1A, IB1=200mA VCC=300V @ 1s @ 3s @ 1s @ 3s Min Typ. 11 8 23 13 Max. Units V V V V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) tON Turn On Time IC=0.4A, IB1=80mA TC=25C IB2=0.2A, VCC=300V TC=125C RL = 750 TC=25C TC=125C tON Turn On Time IC=1A, IB1=160mA IB2=160mA, VCC=300V RL = 300 TC=25C TC=125C TC=25C TC=125C INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG Storage Time IC=0.4A, IB1=80mA IB2=0.2A, VZ=300V LC=200uH TC=25C TC=125C TC=25C TC=125C tC Cross-over Time TC=25C TC=125C tSTG Storage Time IC=0.8A, IB1=160mA TC=25C IB2=160mA, TC=125C VCC=300V LC=200uH TC=25C TC=125C tC Cross-over Time TC=25C TC=125C 1.4 1.7 130 80 210 130 4.9 5.3 170 340 300 810 600 250 5.5 350 200 2.0 s s ns ns ns ns s s ns ns ns ns 250 260 3.3 3.8 220 250 4.3 5.0 5.0 450 4.0 350 ns ns s s ns ns s s tOFF Turn Off Time tOFF Turn Off Time tF Fall Time tF Fall Time (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 3 www.fairchildsemi.com KSC5502 -- High Voltage Power Switch Mode Application Typical Characteristics VCE=1V 100 IC[A], COLLECTOR CURRENT 3 hFE, DC CURRENT GAIN 1A 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA IB=100mA TJ=125 C o o 2 TJ=25 C 10 1 0 0 1 2 3 4 5 6 7 1 1 10 100 1000 VCE[V], COLLECTOR EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT) Figure 1. Static Characteristic Figure 2. DC current Gain 10 IC=5IB IC=10IB 10 VCE(sat)(V), VOLTAGE VCE(sat)(V), VOLTAGE 1 1 TJ=125 C 0.1 o TJ=125 C 0.1 o TJ=25 C o TJ=25 C o 0.01 1 10 100 1000 0.01 1 10 100 1000 IC(mA), COLLECTOR CURRENT IC(mA), COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 2 o Figure 4. Collector-Emitter Saturation Voltage TJ=25 C 2.0A IC=5IB VCE[V], VOLTAGE 1.5A 1.0A 1 VBE[V], VOLTAGE 1 TJ=25 C o 0.4A IC=0.2A TJ=125 C o 0 1 10 100 1k 0.1 1 10 100 1k IB[mA], BASE CURRENT IC[mA], COLLECTOR CURRENT Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 4 www.fairchildsemi.com KSC5502 -- High Voltage Power Switch Mode Application Typical Characteristics (Continued) 1000 900 800 IC=10IB 700 600 500 IC=5IB1=2IB2 VCC=300V PW=20us VBE[V], VOLTAGE tON[ns],TIME 1 400 TJ=25 C o 300 TJ=125 C o TJ=125 C o 200 o TJ=25 C 0.1 1 10 100 1k 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 7. Base-Emitter Saturation Voltage 5 4.5 4 3.5 3 Figure 8. Resistive Switching Time, ton 1000 900 800 IC=5IB1=2IB2 VCC=300V PW=20us 700 600 500 IC=5IB1=5IB2 VCC=300V PW=20us tOFF(us),TIME tON[ns],TIME 400 2.5 TJ=125 C 2 o 300 TJ=125 C o TJ=25 C 200 1.5 o o TJ=25 C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 9. Resistive Switching Time, toff Figure 10. Resistive Switching Time, ton 6 9 8 7 6 5 IC=5IB1=5IB2 VCC=300V PW=20us 4 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=125 C o tOFF(us),TIME tSTG(us),TIME 3 5 TJ=125 C 4 o TJ=25 C 3 o 2 TJ=25 C o 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 11. Resistive Switching Time, toff Figure 12. Inductive Switching Time, tSTG (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 5 www.fairchildsemi.com KSC5502 -- High Voltage Power Switch Mode Application Typical Characteristics (Continued) 400 300 600 200 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH 500 TJ=25 C o 400 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=25 C o tF(ns),TIME 100 90 80 70 60 50 40 30 TJ=125 C o tC[ns],TIME 300 200 TJ=125 C o 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 13. Inductive Switching Time, tF 10 9 8 7 6 5 Figure 14. Inductive Switching Time, tc 2000 IC=5IB1=5IB2 VCC=15V VZ=300V LC=200uH TJ=125 C 1000 900 800 700 600 500 o IC=5IB1=5IB2 VCC=15V VZ=300V LC=200uH TJ=125 C o tSTG(us),TIME TJ=25 C o tF(ns),TIME 4 400 300 3 200 2 TJ=25 C 100 90 80 70 60 o 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tSTG 4000 3000 Figure 16. Inductive Switching Time, tF 5 o 2000 IC=5IB1=5IB2 VCC=15V VZ=300V LC=200uH TJ=125 C o 4 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=25 C TJ=125 C o 500 400 300 tSTG, TIME[us] tC[ns],TIME 1000 900 800 700 600 3 IC=0.8A TJ=25 C o 2 1 200 IC=0.4A 100 0.3 0 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 10 11 12 IC[A], COLLECTOR CURRENT hFE, FORCED GAIN @ VCE=1V & IC=0.8A Figure 17. Inductive Switching Time, tc Figure 18. Inductive Switching Time, tSTG (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 6 www.fairchildsemi.com KSC5502 -- High Voltage Power Switch Mode Application Typical Characteristics (Continued) 300 500 250 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=25 C TJ=125 C 400 o o IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=25 C TJ=125 C o o 200 tF, TIME[ns] 150 tC, TIME[ns] IC=0.8A 300 IC=0.8A IC=0.4A 100 200 IC=0.4A 100 50 0 10 11 12 0 10 11 12 hFE, FORCED GAIN @ VCE=1V & IC=0.8A hFE, FORCED GAIN @ VCE=1V & IC=0.8A Figure 19. Inductive Switching Time, tF 1000 Figure 20. Inductive Switching Time, tc 60 F=1MHz Cib 50 PC[W], POWER DISSIPATION CAPACITANCE[pF] 100 40 30 10 Cob 20 10 0 1 1 10 100 0 50 o 100 150 200 REVERSE VOLTAGE[V] TC( C), CASE TEMPERATURE Figure 21. Capacitance Figure 22. Power Derating (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 7 www.fairchildsemi.com KSC5502 KSC5502 High Voltage Power Switch Mode Application TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c) 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 8 www.fairchildsemi.com |
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